silicon photo transistor 1. structure 1.1 chip size : 0.60mm x 0.45mm 1.2 chip thickness : 220 30um 1.3 metallization : top - al, bottom - au 1.4 passivation : silicon nitride 1.5 bonding pad size - emitter : 130um - base : 60um x 60um 2. electro-optical characteristics (ta=25 ) symbol min typ max unit condition i ceo 500 na v ce =10v p 880 nm nm *parallel light of 1,000lux illumination is applied by a tungsten lamp of 2856k. 3. guaranteed probed electrical characteristics (ta=25 ) symbol min typ max unit bv ceo 60 v bv cbo 90 v bv ebo 6.5 v bv eco 5v i ceo 50 na v ces 300 mv tr/tf us h fe 400 1,600 - 4. maximum ratings (ta=25 ) symbol rating unit v ceo 30 v v eco 5v t j 150 eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr emitter-collector voltag e collector-emitter voltag e OPB0604 i ce =500ua condition 15/15(typ) parameter c-e voltage e-c voltage c-e leakage current v ce =10v, ic=1ma dc current gain v ce =5v, i c =1ma, rl-1000 i c =5ma, i b =1ma v ce =10v i ec =50ua 500~1,050 spectrum sensitivity i cb =50ua i ce =50ua auk corp. peak sensing wavelength c-e leakage current parameter rise/fall time c-e saturation voltage e-b voltage c-b voltage parameter junction temperature : emitter electrode : base electrode
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